P and n-type silicon surface barrier nuclear particle detectors

Abstract

The theory of barrier formation at a netal-semiconductor contact is discussed. The development of p-type silicon surface barrier detectors and a comparative study of the performance of p and n-type surface barrier detectors is presented. The precautions to be taken at different stages in the fabrication of surface barrier detectors are investigated and the possibility of p-type surface barrier dE/dx detectors is established. A brief account of the detection of neutrons and gamma rays is reported.