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P and n-type silicon surface barrier nuclear particle detectors

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dc.contributor.authorMathew, Plackottu Joseph
dc.date.accessioned2011-08-25T21:13:01Z
dc.date.accessioned2022-10-30T18:21:19Z
dc.date.available2011-08-25T21:13:01Z
dc.date.available2022-10-30T18:21:19Z
dc.date.copyright1966
dc.date.issued1966
dc.description.abstractThe theory of barrier formation at a netal-semiconductor contact is discussed. The development of p-type silicon surface barrier detectors and a comparative study of the performance of p and n-type surface barrier detectors is presented. The precautions to be taken at different stages in the fabrication of surface barrier detectors are investigated and the possibility of p-type surface barrier dE/dx detectors is established. A brief account of the detection of neutrons and gamma rays is reported.en_NZ
dc.formatpdfen_NZ
dc.identifier.urihttps://ir.wgtn.ac.nz/handle/123456789/25850
dc.languageen_NZ
dc.language.isoen_NZ
dc.publisherTe Herenga Waka—Victoria University of Wellingtonen_NZ
dc.rights.holderAll rights, except those explicitly waived, are held by the Authoren_NZ
dc.rights.licenseAuthor Retains Copyrighten_NZ
dc.rights.urihttps://www.wgtn.ac.nz/library/about-us/policies-and-strategies/copyright-for-the-researcharchive
dc.subjectSemiconductor nuclear countersen_NZ
dc.subjectSiliconen_NZ
dc.subjectPhysicsen_NZ
dc.titleP and n-type silicon surface barrier nuclear particle detectorsen_NZ
dc.typeTexten_NZ
thesis.degree.disciplinePhysicsen_NZ
thesis.degree.grantorTe Herenga Waka—Victoria University of Wellingtonen_NZ
thesis.degree.levelMastersen_NZ
thesis.degree.nameMaster of Scienceen_NZ
vuwschema.type.vuwAwarded Research Masters Thesisen_NZ

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