dc.contributor.author |
Mathew, Plackottu Joseph |
|
dc.date.accessioned |
2011-08-25T21:13:01Z |
|
dc.date.accessioned |
2022-10-30T18:21:19Z |
|
dc.date.available |
2011-08-25T21:13:01Z |
|
dc.date.available |
2022-10-30T18:21:19Z |
|
dc.date.copyright |
1966 |
|
dc.date.issued |
1966 |
|
dc.identifier.uri |
https://ir.wgtn.ac.nz/handle/123456789/25850 |
|
dc.description.abstract |
The theory of barrier formation at a netal-semiconductor contact is discussed. The development of p-type silicon surface barrier detectors and a comparative study of the performance of p and n-type surface barrier detectors is presented. The precautions to be taken at different stages in the fabrication of surface barrier detectors are investigated and the possibility of p-type surface barrier dE/dx detectors is established. A brief account of the detection of neutrons and gamma rays is reported. |
en_NZ |
dc.format |
pdf |
en_NZ |
dc.language |
en_NZ |
|
dc.language.iso |
en_NZ |
|
dc.publisher |
Te Herenga Waka—Victoria University of Wellington |
en_NZ |
dc.title |
P and n-type silicon surface barrier nuclear particle detectors |
en_NZ |
dc.type |
Text |
en_NZ |
vuwschema.type.vuw |
Awarded Research Masters Thesis |
en_NZ |
thesis.degree.discipline |
Physics |
en_NZ |
thesis.degree.grantor |
Te Herenga Waka—Victoria University of Wellington |
en_NZ |
thesis.degree.level |
Masters |
en_NZ |